advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 700v fast switching characteristics r ds(on) 13.5 simple drive requirement i d 160ma rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25 continuous drain current, v gs @ 10v ma i d @t a =100 continuous drain current, v gs @ 10v ma i dm pulsed drain current 1 ma p d @t a =25 total power dissipation w t stg t j operating junction temperature range thermal data symbol value unit rthj-a maximum thermal resistance, junction-ambient 150 /w data & specifications subject to change without notice halogen-free product AP01L60T-H-HF 100 parameter rating 700 + 30 160 300 0.83 -55 to 150 1 201301112 storage temperature range -55 to 150 parameter g d s a dvanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. the to-92 package is widely used for all commercial-industrial applications. g d s to-92
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 700 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =0.3a - - 13.5 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.3a - 0.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge i d =100ma - 7 11 nc q gs gate-source charge v ds =480v - 1.4 - nc q gd gate-drain ("miller") charge v gs =10v - 3.4 - nc t d(on) turn-on delay time v dd =300v - 8 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =10 -13 - ns t f fall time v gs =10v - 9 - ns c iss input capacitance v gs =0v - 260 420 pf c oss output capacitance v ds =25v - 20 - pf c rss reverse transfer capacitance f=1.0mhz - 3 - pf r g gate resistance f=1.0mhz - 3 - ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage i s =160ma, v gs =0v - - 1.2 v t rr reverse recovery time i s =1a, v gs =0 v , - 345 - ns q rr reverse recovery charge di/dt=100a/s - 1 - c notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP01L60T-H-HF
a p01l60t-h-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.0 0.6 1.2 1.8 2.4 3.0 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =0.3a v g =10v 0.0 0.5 1.0 1.5 0 122436 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 6.0v 5.5v 5.0v v g =4.0v 0.00 0.25 0.50 0.75 1.00 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 5.0v 4.5v v g =4.0v 0.01 0.1 1 10 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 1.6 2 2.4 2.8 3.2 3.6 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v)
AP01L60T-H-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum drain current v.s. fig 10. typical power dissipation case temperature fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 1 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0123456789 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 100m a v ds = 480 v 0.00 0.05 0.10 0.15 0.20 25 50 75 100 125 150 t a , case temperature ( o c ) i d , drain current (a) 0 0.4 0.8 1.2 25 50 75 100 125 150 t a , case temperature( o c) p d (w)
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